mt110cb18t1 document number: s-m0049 www. apt-semi .com rev.1.0, may.31, 2013 1 module type diode maximum ratings symbol item conditions values units i d output current(d.c.) tc=85 110 a i fsm surge forward current t=10ms tvj =45 2250 a i 2 t circuit fusing consideration 25000 a 2 s visol isolation breakdown voltage(r.m.s) a.c.50hz;r.m.s.;1min 3000 v tvj operating junction temperature -40 to +125 tstg storage temperature -40 to +125 mt mounting torque to terminals(m5) 315% nm ms to heatsink(m6) 515% nm weight module approximately 100 g thermal characteristics symbol item conditions values units r th(j-c) thermal impedance, max. junction to case 0.14 /w rth(c-s) thermal impedance, ma x. case to heatsink 0.10 /w electrical characteristics thyristor/diode modules v rrm / v drm 800 to 1800v i fav / i tav 110amp features y international standard package y high surge capability y glass passivated chip y simple mounting y heat transfer through aluminum oxide dbcceramic isolated metal baseplate y ul recognized applied for file no. e360040 type v rrm/ v drm v rsm MT110CB08T1 mt110cb12t1 mt110cb16t1 mt110cb18t1 800v 1200v 1600v 1800v 900v 1300v 1700v 1900v circuit applications y power converters y lighting control y dc motor control and drives y heat and temperature control symbol item conditions values units min. typ. max. v fm forward voltage drop, max. t=25 i f =300a 1.65 v i rrm repetitive peak reverse current, max. t vj =25 v rd =v rrm t vj =125 v rd =v rrm 0.5 6 ma ma
mt110cb18t1 document number: s-m0049 www. apt-semi .com rev.1.0, may.31, 2013 2 thyristor maximum ratings thermal characteristics symbol item conditions values units r th(j-c) thermal impedance, max. junction to case 0.28 /w rth(c-s) thermal impedance, ma x. case to heatsink 0.20 /w electrical characteristics symbol item conditions values units i tav average on-state current sine 180 o ;tc=85 110 a i tsm surge on-state current t vj =45 t=10ms, sine t vj =125 t=10ms, sine 2250 1900 a i 2 t circuit fusing consideration t vj =45 t=10ms, sine t vj =125 t=10ms, sine 25000 18000 a2s visol isolation breakdown voltage(r.m.s) a.c.50hz;r.m.s.;1min 3000 v tvj operating junction temperature -40 to +130 tstg storage temperature -40 to +125 mt mounting torque to terminals(m5) 3 15% nm ms to heatsink(m6) 5 15% nm di/dt critical rate of rise of on-state current t vj = t vjm , 2/3v drm ,i g =500ma tr<0.5us,tp>6us 150 a/us dv/dt critical rate of rise of off-state voltage, min. t j =t vjm ,2/3v drm linear voltage rise 1000 v/us a maximum allowable acceleration 50 m/s 2 symbol item conditions values units min. typ. max. v tm peak on-state voltage, max. t=25 i t =300a 1.65 v i rrm /i drm repetitive peak reverse current, max. / repetitive peak off-state current, max. t vj =t vjm ,v r =v rrm ,v d = v drm 20 ma v to on state threshold voltage for power-loss calculations only (t vj =125 ) 0.9 v r t value of on-state slope resistance. max t vj =t vjm 2 m ? v gt gate trigger voltage, max. t vj =25 , v d =6v 3 v i gt gate trigger current, max. t vj =25 , v d =6v 150 ma v gd non-triggering gate voltage, max. t vj =125 ,v d =2/3v drm 0.25 v i gd non-triggering gate current, max. t vj =125 , v d =2/3v drm 6 ma i l latching current, max. t vj =25 , r g = 33 ? 300 600 ma i h holding current, max. t vj =25 , v d =6v 150 250 ma tgd gate controlled delay time tvj=25 , ig=1a, dig/dt=1a/us 1 us tq circuit commutated turn-off time t vj =t vjm 100 us
mt110cb18t1 document number: s-m0049 www. apt-semi .com rev.1.0, may.31, 2013 3 performance curves fi g 1. power dissi p ation fig2.forward current derating curve 0 i tav 50 100 a 150 200 w 150 100 50 p tav 0 rec.30 rec.60 rec.120 sin.180 dc fig3. transient thermal impedance fig4. max non-repetitive forward surge current fig5. forward characteristics 0.001 t 0.01 0.1 1 10 s 100 0.50 / w 0.25 0 z th(j- c ) z th(j- s ) 10 100 ms 1000 50hz 2500 a 1250 0 0 v tm 0.5 1.0 1.5 v 2.0 300 a 200 100 i t 0 max . typ . dc sin.180 rec.120 rec.60 rec.30 i tavm 200 a 160 120 80 40 0 0 tc 50 100 130 25 - - - 125
mt110cb18t1 document number: s-m0049 www. apt-semi .com rev.1.0, may.31, 2013 4 package outline information case: t1 dimensions in mm fig6. gate trigger characteristics 1/2 mt110cb18t1 v gd125 i gd125 i gt v gt 20v;20 ? pg(tp) 0.001 i g 0.01 0.1 1 10 a 100 100 v 10 1 v g 0.1 -40 25 125 t vj
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